| PART |
Description |
Maker |
| MH16S64APFC-8L MH16S64APFC-7 MH16S64APFC-7L MH16S6 |
From old datasheet system
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S64PHB-6 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16S64BAMD-6 B99029 |
From old datasheet system
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB_T166S4BWG M6MGB E99008_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi
|
| MH16S72BAMD-6 B99030 |
From old datasheet system
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16D72AKLB-10 MH16D72AKLB-75 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M29GT160BVP-80 M5M29GB160BVP-80 |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Corporation
|
| THMY641661BEG THMY641661BEG-10 THMY641661BEG-80 |
16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE
16/777/216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| AK5916384GP-60 AK5916384SP-70 |
16,777,216 Word by 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
